Polarization reversal and memory effect in anti-ferroelectric materials
نویسندگان
چکیده
منابع مشابه
Ferroelectric polarization reversal via successive ferroelastic transitions.
Switchable polarization makes ferroelectrics a critical component in memories, actuators and electro-optic devices, and potential candidates for nanoelectronics. Although many studies of ferroelectric switching have been undertaken, much remains to be understood about switching in complex domain structures and in devices. In this work, a combination of thin-film epitaxy, macro- and nanoscale pr...
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A detailed investigation on the electrical, structural and fatigue characteristics of thin film ferroelectric memory devices fabricated from potassium nitrate-phase I11 (KN03-111) was conducted at Michigan Technological University under a grant from Ramtron Corporation, Colorado Springs, Colorado. This research involved: (1) fabrication and processing of 16x16 (256 bit) capacitor type memory de...
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The ideal intrinsic barriers to domain switching in c-phase PbTiO3 PTO , PbZrO3 PZO , and PbZr1−xTixO3 PZT are investigated via first-principles computational methods. The effects of epitaxial strain on the atomic structure, ferroelectric response, barrier to coherent domain reversal, domain-wall energy, and barrier to domain-wall translation are studied. It is found that PTO has a larger polar...
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متن کاملPolarization coupling in ferroelectric multilayers
M. B. Okatan,1 J. V. Mantese,2 and S. P. Alpay1,3,* 1Department of Chemical, Materials, and Biomolecular Engineering, Materials Science and Engineering Program, University of Connecticut, Storrs, Connecticut 06269, USA 2United Technologies Research Center, East Hartford, Connecticut 06108, USA 3Department of Physics, University of Connecticut, Storrs, Connecticut 06269, USA Received 23 December...
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ژورنال
عنوان ژورنال: Scripta Materialia
سال: 2017
ISSN: 1359-6462
DOI: 10.1016/j.scriptamat.2016.10.004